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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Complement to type BDW84/84A/84B/84C/84D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage INCH VCEO ANG BDW83B BDW83C BDW83D BDW83 BDW83A SEM E Open emitter DUC ICON CONDITIONS VALUE 45 TOR 60 80 UNIT V 100 120 45 60 Collector-emitter voltage BDW83B BDW83C BDW83D Open base 80 100 120 V VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Open collector 5 15 0.5 V A A W TC=25ae Collector power dissipation Ta=25ae Junction temperature Storage temperature 150 3.5 150 -65~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BDW83 BDW83A V(BR)CEO Collector-emitter breakdown voltage BDW83B BDW83C BDW83D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW83 IC=6A ,IB=12mA IC=15A ,IB=150mA IC=6A ; VCE=3V VCB=45V, IE=0 TC=150ae VCB=60V, IE=0 TC=150ae VCB=80V, IE=0 TC=150ae VCB=100V, IE=0 TC=150ae VCB=120V, IE=0 TC=150ae IC=30mA, IB=0 SYMBOL BDW83/83A/83B/83C/83D CONDITIONS MIN 45 60 80 100 120 TYP. MAX UNIT V 2.5 4.0 2.5 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 0.5 5.0 V V V ICBO IN Collector cut-off current BDW83A BDW83B BDW83C BDW83D BDW83 ICEO Collector cut-off current HAN C BDW83A BDW83B SEM GE VCE=30V, IB=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 OND IC TOR UC 1 mA mA BDW83C BDW83D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off current DC current gain DC current gain Diode forward voltage Turn-on time Turn-off time 2 750 100 3.5 0.9 7.0 |I 20000 mA IC=6A ; VCE=3V IC=15A ; VCE=3V IE=15A IC = 10 A, IB1 =-IB2=40 mA RL=3| ; VBE(off) = -4.2V Duty CycleU 2% V s |I s THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.83 UNIT ae /W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDW83/83A/83B/83C/83D SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.1mm) 3 |
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